Gas source molecular beam epitaxy as a multi-wafer epitaxial production technology
Abstract
We present the total merits of gas source MBE (GSMBE) in practical operation as a mass production tool by showing the actual application data. GSMBE realized high-quality crystal growth where at 77 K mobilities as high as 1.21×10 5 cm 2/V s have been obtained from a 7 μm-thick GaAs layer with a carrier concentration of 3.9×10 14 cm -3. The uniformity of sheet resistance in n-GaAs and AlAs mole fractions in AlGaAs over a diameter of 27 cm is excellent with a deviation is less than 2% (1.5 and 0.27%, respectively). High throughput production, dealing with four 4″ diameter wafers at a time, has also been realized with low cost for purchase and operation while maintaining high crystal quality.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- May 1999
- DOI:
- 10.1016/S0022-0248(98)01266-4
- Bibcode:
- 1999JCrGr.201....8I