Computer-assisted growth of low-EPD GaAs with 3$Prime; diameter by the vertical gradient-freeze technique
Abstract
We have grown 3″, silicon-doped GaAs crystals with low dislocation density by the vertical gradient freeze (VGF) method. The thermal conditions in a newly designed, multi-zone VGF-furnace were optimized by the aid of numerical simulation. A computer controlled temperature-time program of the 9 heaters was acquired which allows to keep the axial temperature gradient in the solid (liquid) GaAs at the optimized constant values of 7(2) K/cm during the whole growth process. By using these calculated heater temperatures in real growth experiments, we succeeded in growing 3″ single crystals with EPD<500 cm -2.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- March 1999
- DOI:
- 10.1016/S0022-0248(98)01220-2
- Bibcode:
- 1999JCrGr.198..361A