Near-field Optical Measurements of Semiconductor Materials and Devices
Abstract
We are applying a Reflection-mode Apertureless Near-field Scanning Optical Microscope (RANSOM) to study defect detection in semiconductor devices and materials. Optical data from approach curves show a characteristic near-field optical signal. Evaluation of lateral definition is accomplished by correlation with known features of 100 nm or less. The RANSOM regulates on the force between the tip and sample; probe tips are made of etched tungsten wires which vibrate in the pecking mode. Since the metallic tip is conductive, we have a multi-purpose scanned probe capable of simultaneously gathering current, force (topographical), and optical data. With the RANSOM, leakage currents through a SiO2 layer can be detected along with topographical and optical information. Such capability could be applied to the current leakage problem across field-oxide edges. Knowledge of the leakage current across the field oxide and the thickness gradient of its edge is very important in process development of CMOS devices.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1998
- Bibcode:
- 1998APS..MAR.M2610F