Photoluminescence spectroscopy of direct bonded silica based wafers
Abstract
We report results of an original photoinduced luminescence spectroscopy application to determine the process of direct bonding of silica wafers. This application is based upon laser induced visible fluorescence of the defects created during the bonding process and can also be used in the cases when neither electron microscopy nor optical near field analysis permit a junction observation. The results are related to two different assemblies: first we consider two pyrex glass wafers assembled by direct wafer bonding technology and second we applied the same technology to two ion-exchanged wafers to obtain buried planar waveguide. The bonding process induces for both assemblies on the one hand an enhancement of emitting defects at 570 nm which are present in the blank wafer material and create on the other hand new defects emitting at 525 nm.
- Publication:
-
Journal of Non Crystalline Solids
- Pub Date:
- August 1997
- DOI:
- 10.1016/S0022-3093(97)00208-1
- Bibcode:
- 1997JNCS..216...95B