Towards the optimization of the growth and properties of modulated electron systems on GaAs vicinal surfaces
Abstract
The growth of quantum structures with strong in-plane 1D potential modulation (amplitude 0268-1242/11/11S/014/img1, the Fermi energy of an electron gas in a selectively doped heterojunction) at short scale (periodicity 0268-1242/11/11S/014/img2, its Fermi wavelength) relies on the understanding of both the epitaxy and the electronic properties. Some issues such as the morphology of the step array, the organization of the Ga and Al atoms on the surface, and the effect of the electron gas screening or of the tilt of the lateral modulation on the effective potential, are discussed.
- Publication:
-
Semiconductor Science Technology
- Pub Date:
- November 1996
- DOI:
- 10.1088/0268-1242/11/11S/014
- Bibcode:
- 1996SeScT..11.1534E