Neutron induced defects in silicon detectors characterized by DLTS and TSC methods
Abstract
Neutron induced defects in silicon detectors fabricated from n-type float zone material of different resistivity (100-6000Ω cm) have been studied using the C-DLTS (Capacitance-Deep Level Transient Spectroscopy) and TSC (Thermally Stimulated Current) method. While the application of the C-DLTS technique for high resistivity material is limited to neutron fluences below about 10 11 cm -2 the TSC method remains a powerful tool for the defect characterization even at high fluences. Up to 5 defect levels were observed in some of the unirradiated samples. These partly are due to thermal treatments during the fabrication process. After neutron irradiation defect levels at Ec - 0.17, -0.23 and -0.42 eV and at Ev + 0.36 eV were found. A detailed analysis of the predominant peak at about -0.42 eV has shown that it is a superposition of two levels at -0.39 and -0.42 eV. For these defect levels introduction rates, annealing effects and a comparison between the DLTS and TSC technique are presented. Possible correlations of these results with macroscopic detector properties are discussed.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- February 1996
- DOI:
- 10.1016/0168-9002(95)01405-5
- Bibcode:
- 1996NIMPA.377..258F