Influence of electron irradiation and annealing on the photoluminescence of {Si}/{Ge} superlattices and {Si}/{Ge} quantum wells

The influence of irradiation with 3-4 MeV electrons and subsequent annealing on {Si}/{Ge} strained layer superlattices (SLs) and {Si}/{Ge} quantum wells (QWs) both containing monolayers of pure Ge has been studied by photoluminescence (PL). An enhanced radiation resistance of the superlattice PL was found as compared to bulk Si. A different post-irradiation annealing behavior of the SLs and QWs was observed, which is probably connected with the different geometries and strain levels in the two types of sample structures involved. The results are compared with experiments for hydrogen passivation in a glow discharge plasma where we observe also different behavior of the two types of structures studied.