Four-Wave-Mixing Oscillations in a simplified Boltzmannian semiconductor model with LO-phonons

The recently discovered(L. Bányai, D. B. Tran Thoai, E. Reitsamer, H. Haug, D. Steinbach, M. U. Wehner, M. Wegener, T. Marschner and W. Stolz, Phys. Rev. Lett. 75), 2188 (1995). oscillations of the integrated four-wave-mixing signal in semiconductors due to electron-LO-phonon scattering are studied within a simplified Boltzmann-type model. Although several aspects of the experimental results require a description within the framework of non-Markovian quantum-kinetic theory, our simplified Boltzmannian model is well suited to analyze the origin of the observed novel oscillations of frequency (1+m_e/m_h) hbarω_LO. To this end, we developed a third-order, analytic solution of the semiconductor Bloch equations (SBE) with Boltzmann-type, LO-phonon collision terms. Results of this theory along with numerical solutions of the SBE will be presented.