Temperature dependence of the magnetoresistance of InGaAs antidot lattices
Abstract
The magnetoresistance of two samples with antidot lattices fabricated in a 2D electron gas in the lattice-matched In_0.53Ga_0.47As/InP system, is studied as a function of temperature (3K < T < 120K). Magnetoresistance peaks due to geometrical resonances are observed up to temperatures above 100K. The purpose of this study is to provide experimental data on the dependence of the amplitud e of the magnetoresistance peaks on temperature, along with mobility data in the same temperature range. The broadening of the peaks with increasing temperatur e is consistent with the thermal smearing of the Fermi surface. The reduction of the amplitude of the peaks is in part due to thermal smearing, but also to the increase in the electron scattering rate. The temperature-dependent part of th e electron scattering time in antidot arrays is deduced from the amplitude reduction, and compared to the mobility relaxation time.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1996
- Bibcode:
- 1996APS..MAR.E1904H