A Plasma Purification Method for Plasma Source Ion Implantation Doping of Semiconductors
Abstract
Using Plasma Source Ion Implantation (PSII) to create the shallow source and drain structures required for next generation devices may be a necessity footnote Semiconductor Industry Association, The National Technology Roadmap for Semiconductors, (1994).. For example, future devices are predicted to require heavy metal doses be kept less than 3×10^9 atoms per square centimeterfootnote N. Natsuaki, T. Kamata, K. Kondo, Y. Kureishi (1995), Nucl. Inst. Meth. Phys. B, 96, 62.. Plasma purification is done using ion cyclotron resonance to selectively expel unwanted ions from the plasma where they are neutralized upon collision with the chamber wall and no longer an implantation hazardfootnote J. L. Shohet, E. B. Wickesberg, M. J. Kushner (1994), J. Vac. Sci. Technol. A, 12, 1380. With a computer simulation we determine the necessary field strengths and uniformity for plasma purification, cleaning efficiency and frequency/mass resolution of the method. Initial results to evaluate the theory using mass spectrometry will also be shown. Work supported by the National Science Foundation under Grant EEC-8721545.
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- October 1996
- Bibcode:
- 1996APS..GEC.WPA02S