Modeling of Gas-Phase Reactions in Electron Cyclotron Resonance Plasma forB!!(JOxide Deposition
Abstract
To develop ECR(Electron cyclotron resonance)-CVD apparatus with minimizing lead-time and cost, it is necessary to adopt simulation techniques to design them. A plasma simulator using two-dimensional axisymmetric continuum model for ECR plasma is employed to evaluate an ECR plasma reactor for SiO2 or SiO_xFy deposition. The simulator calculates plasma density, electron temperature, and radical density profiles in the reactor for given microwave mode and power, magnetic field profile, inlet positions and flow rates of gases, pumping speed, etc. We perform simulations using gas mixtures of Ar/O_2, Ar/O_2/SiH4 and Ar/O_2/SiF_4, and compare the numerical results with experimental ones. The ion saturation current density distributions calculated by the simulator have good correspondence with one which were determined by Langmuir probe, when we vary the microwave power in Ar and O_2. Also radical fragments distributions above wafer which are calculated have strong depencence with experimental depositions with regard to the uniformities of them. For example, by changing microwave mode, the results of radical fragments distributions by the simulator shows differences which have good agreement with experiment.
- Publication:
-
APS Division of Plasma Physics Meeting Abstracts
- Pub Date:
- November 1996
- Bibcode:
- 1996APS..DPP..1F01T