1.3-μm GaInAsP/InP buried-ridge-structure laser and its monolithic integration with photodetector using reactive ion beam etching
Abstract
A 1.3 micron GaInAsP/InP BRS laser is monolithically integrated with a photodiode. Reactive Ion Beam Etching technique (RIBE) is used for the realization of the laser mesa stripe and for the separation of the laser and the photodetector sections. Influence of the Laser-Detector gap width, the detector facet inclination, and the laser beam waist on the coupling efficiency between LD and PD are discussed theoretically and experimentally. Coupling efficiency as high as 50 micro A/mW is obtained by optimizing the structure. A packaged pigtailed integrated LD-PD is realized, in which the signal emitted from the rear laser facet is detected by the integrated photodiode and used to stabilize the laser output power, through a hybrid feedback circuit, to within 0.1% over 55 C temperature range.
- Publication:
-
Journal of Lightwave Technology
- Pub Date:
- May 1994
- DOI:
- 10.1109/50.293963
- Bibcode:
- 1994JLwT...12..742B
- Keywords:
-
- Gallium Phosphides;
- Indium Gallium Arsenides;
- Indium Phosphides;
- Laser Beams;
- Laser Outputs;
- Photodiodes;
- Photometers;
- Semiconductor Devices;
- Semiconductor Lasers;
- Electronic Packaging;
- Etching;
- Feedback Circuits;
- Hybrid Circuits;
- Ion Beams;
- Light Emission;
- Lasers and Masers