High-power V-band AlInAs/GaInAs on InP HEMT's
Abstract
We report on the dc and RF performance of delta-doped channel AlInAs/GaInAs on InP power HEMT's. A 450-micron-wide device with a gate length of 0.22 micron has achieved an output power of 150 mW (at the 1-dB gain compression point) with power-added efficiency of 20 percent at 57 GHz. The device has a saturated output power of 200 mW with power-added efficiency of 17 percent. This is the highest output power measured from a single InP-based HEMT at this frequency, and demonstrates the feasibility of these HEMT's for high-power applications in addition to low-noise applications at V band.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- April 1993
- DOI:
- 10.1109/55.215155
- Bibcode:
- 1993IEDL...14..188M
- Keywords:
-
- Aluminum Arsenides;
- Extremely High Frequencies;
- High Electron Mobility Transistors;
- Indium Gallium Arsenides;
- Indium Phosphides;
- Conduction Bands;
- Doped Crystals;
- Efficiency;
- Integrated Circuits;
- Thermal Conductivity;
- Transconductance;
- Electronics and Electrical Engineering