Investigations on the origin of AlGaAs-GaAs HEMTs LF channel noise
Abstract
The influence of deep levels on AlGaAs/GaAs HEMTs operation has been evaluated from the transconductance frequency dispersion and the low frequency channel noise analysis. The LF noise level of damaged devices has been shown to increase after hot electron aging tests.
- Publication:
-
Noise in Physical Systems and 1/f fluctuations
- Pub Date:
- August 1993
- DOI:
- 10.1063/1.44543
- Bibcode:
- 1993AIPC..285..264L
- Keywords:
-
- 85.30.Tv;
- 72.70.+m;
- 73.20.Hb;
- Field effect devices;
- Noise processes and phenomena;
- Impurity and defect levels;
- energy states of adsorbed species