Theoretical and experimental investigation of heterojunction interfaces
Abstract
Heterojunction energy-band discontinuities offer the device designer additional control over electron and hole transport near p-n junctions. Heterojunctions are used to develop new types of solid-state electron devices with properties not available from homojunction based technology. We have developed an experimental technique, based on the use of x-ray photoelectron spectroscopy (XPS), that enables us to measure band offsets to a precision of +/- 0.04 eV and to measure changes in band offsets to a precision of +/- 0.01 eV. With the aid of this powerful experimental approach, we have been able to investigate the following new areas in heterojunction physics: crystallographic orientation dependence of band offsets; growth sequence variation; nontransitivity; and time dependent shifts in band offsets.
- Publication:
-
Final Report
- Pub Date:
- February 1991
- Bibcode:
- 1991ric..rept.....K
- Keywords:
-
- Electron Transfer;
- Energy Bands;
- Heterojunction Devices;
- Heterojunctions;
- Interfaces;
- P-N Junctions;
- Photoelectron Spectroscopy;
- X Ray Spectroscopy;
- Band Structure Of Solids;
- Discontinuity;
- Electronic Equipment;
- Energy Gaps (Solid State);
- Schottky Diodes;
- Electronics and Electrical Engineering