A 31 GHz static frequency divider using Au/WSiN gate GaAs MESFETs
Abstract
A divide-by-four static frequency divider is fabricated to evaluate the ultra-high-speed performance of Au/WSiN gate GaAs MESFETs. The divider consists of two T-type flip-flops (T-F/F) and three buffers based on low-power source-coupled FET logic (LSCFL). The divider operates up to 31.4 GHz at room temperature at power dissipation of 150 mW per T-F/F using Au/WSiN gate GaAs MESFETs well scaled down to 0.3 micron gate-length.
- Publication:
-
Institute of Electronics Communication Engineers of Japan Transactions Section E English
- Pub Date:
- December 1991
- Bibcode:
- 1991JIECE..74.4136T
- Keywords:
-
- Field Effect Transistors;
- Frequency Dividers;
- Gallium Arsenides;
- Schottky Diodes;
- Transistor Circuits;
- Transistor Logic;
- Very High Frequencies;
- Flip-Flops;
- Gates (Circuits);
- Gold;
- Microwave Switching;
- Silicon Nitrides;
- Temporal Resolution;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering