Growth of Li-doped ZnSe by molecular beam epitaxy using an alkali metal dispenser
Abstract
An alkali metal dispenser was employed as a lithium dopant source in the growth of ZnSe films by molecular beam epitaxy in an attempt to obtain p-type conductivity. Depending on the doping level, these films exhibited either dominant acceptor-bound exciton emission in low-temperature photoluminescent spectra, indicative of p-type conversion, or strong donor-acceptor-pair emission, likely due to transitions between interstitial Li donors and substitutional Li acceptors. Electrical resistivity was very high preventing a direct measurement of the majority carriers.
- Publication:
-
Vacuum
- Pub Date:
- January 1990
- DOI:
- 10.1016/0042-207X(90)90002-G
- Bibcode:
- 1990Vacuu..40..491L