Design and experimental characteristics of strained In(0.52)Al(0.48)As/In(x)Ga(1-x)As (x greater than 0.53) HEMT's
Abstract
Strained In(0.52)Al(0.48)As/In(x)Ga(1-x)As (x greater than 0.53) high electron mobility transistors (HEMTs) are studied theoretically and experimentally. A device design procedure is reported that is based on bandstructure and charge control self-consistent calculations. It predicts the sheet carrier density and electron confinement as a function of doping and thickness of layers. The DC performance at 300 K is presented. Wafer statistics demonstrate improvement of device characteristics with excess indium in the channel (gm,intr = 500 and 700 mS/mm for x = 0.60 and 0.65). Microwave characterization shows the fT improvement (fT = 40 and 45 GHz for x = 0.60 and 0.65, respectively) and the Rds limitations of the 1-micron-long-gate HEMTs.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1989
- DOI:
- 10.1109/16.40907
- Bibcode:
- 1989ITED...36.2249N
- Keywords:
-
- Gallium Arsenides;
- High Electron Mobility Transistors;
- Indium Arsenides;
- Microwave Circuits;
- Network Synthesis;
- Volt-Ampere Characteristics;
- Aluminum Arsenides;
- Band Structure Of Solids;
- Carrier Density (Solid State);
- Poisson Equation;
- Quantum Wells;
- Schroedinger Equation;
- Electronics and Electrical Engineering