Electrons mobility in the InP

Temperature dependences of the Hall mobilities in InP in a temperature interval 77-300K has been investigated. Epitaxial structures with free electrons concentrations 10^14...10^15 cm^-3 has been used. These epitaxial structures were grown on semiisolating supports by a clorid-hydrid method from a gaseous phase. To determine the contribution of the scattering mechanisms it is reasonable to examine concommitantly dependences of Hall mobilities and magnetoresistive factors. From experimental and theoretical data follows that high values of acoustic deformation potential used in the literature is unbiased.