InSe and GaSe considered as efficient photosensitive materials in a wide spectral range (1-6 eV)
Abstract
Experimental results are presented on the quantum efficiency of the photoconductance of layered crystals of InSe and GaSe (candidate UV-detector materials), indicating that these crystals have high values of photosensitivity up to photon energies of 6 eV. The elevated quantum efficiency of these crystals in the UV range is connected with changes in the scattering mechanism of charge carriers and their lifetime near the surface of the material.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- September 1988
- Bibcode:
- 1988PZhTF..14.1628S
- Keywords:
-
- Crystal Optics;
- Indium Compounds;
- Photoconductivity;
- Quantum Efficiency;
- Selenides;
- Gallium Selenides;
- Photosensitivity;
- Quantum Optics;
- Ultraviolet Spectra;
- Optics