The Effect of Interposing Thin Oxide Layers on the Photovoltaic Properties of a-Si:H Solar Cells. I. Between a-Si:H and Transparent Conductive Oxide Layers
Abstract
The open-circuit voltages (Voc) of Schottky-barrier type, hydrogenated-amorphous-silicon (a-Si) solar cells having structures [glass/fluorine-doped SnO2/metal-oxide/i-p a-Si/Ag] and [glass/SnO2(F)/metal-oxide/i-n a-Si/Ag] with NiO, SnO2(F), TiOx, Fe2O3, WO3, and V2O5 as the interposed metal-oxides, were studied and discussed on the basis of the work functions of the metal-oxide layers determined experimentally. Metal-oxides having small work functions, such as NiO and SnO2(F), gave high Voc for the former-type cells, while those with large work functions, such as V2O5, gave high Voc for the latter-type cells. Similar studies were also made for p-i-n type a-Si solar cells. For p-i-n cells with the p-layer thinner than 10 nm, the Voc was enhanced by interposing a very thin V2O5 layer between the SnO2(F) layer and the p-layer.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- June 1988
- DOI:
- 10.1143/JJAP.27.880
- Bibcode:
- 1988JaJAP..27..880S