Electrical properties of CdTe metal-semiconductor field effect transistors
Abstract
This paper reports on the preparation of CdTe metal semiconductor FETs which have gold Schottky barriers with reverse breakdown voltages as high as 13.5 V and ideality factors approaching 1.2 and which exhibit good depletion mode transistor action. The devices were manufactured employing polished and etched semiinsulating (100) CdTe substrates, with each film deposition consisting of the growth of a 1-micron buffer layer of insulating CdTe by conventional MBE, followed by the deposition of a 0.4-0.8 micron thick conducting n-type CdTe:In layer by photoassisted MBE. Transistor structures were fabricated photolithographically using a three-level masking sequence for device isolation, Ohmic contacts, and Schottky gates, respectively; isolation between devices was achieved by a bromine:ethylene glycol etch. Due to the refinements in processing, device yields were increased by a factor of 10. Carrier concentrations determined from capacitance-voltage measurements and Hall-effect measurements were in good agreement.
- Publication:
-
Journal of Vacuum Science Technology A: Vacuum Surfaces and Films
- Pub Date:
- July 1988
- DOI:
- 10.1116/1.575493
- Bibcode:
- 1988JVSTA...6.2722D
- Keywords:
-
- Cadmium Tellurides;
- Crystal Lattices;
- Electrical Properties;
- Field Effect Transistors;
- Mercury Cadmium Tellurides;
- Signal Processing;
- Capacitance-Voltage Characteristics;
- Crystal Growth;
- Hall Effect;
- Molecular Beam Epitaxy;
- Schottky Diodes;
- Electronics and Electrical Engineering