Method for calculating the microwave parameters of millimeter-wave IMPATT diodes
Abstract
An inertial diffusion-drift model (IDDM) for IMPATT diodes with a submicron-thickness p-n junction is proposed which includes the Poisson equation and takes into account the transport of electrons and holes, and their energies. A method for solving the dynamic boundary value problem for the IDDM is developed, along with a program for calculating the microwave parameters of GaAs IMPATT diodes.
- Publication:
-
Avtometriia
- Pub Date:
- June 1988
- Bibcode:
- 1988Avtme.......25G
- Keywords:
-
- Avalanche Diodes;
- Finite Difference Theory;
- Hole Mobility;
- Millimeter Waves;
- Semiconductor Diodes;
- Diffusion Coefficient;
- Electron Mobility;
- Electronics and Electrical Engineering