Progress and challenges in HEMT LSI technology
Abstract
A high electron mobility transistor is a promising device for ultrahigh speed LSI/VLSI, especially operating at 77 K. Recent progress and technical challenges in HEMT LSI technology are discussed.
- Publication:
-
Optical Society of America, Topical Meeting on Picosecond Electronics and Optoelectronics
- Pub Date:
- October 1987
- Bibcode:
- 1987osa..meetQ..46A
- Keywords:
-
- Electrical Properties;
- Large Scale Integration;
- Modfets;
- Very Large Scale Integration;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Transport Properties;
- Solid-State Physics