O the Growth of (100) Gallium-Arsenide and (100) Indium-Arsenide by Molecular Beam Epitaxy.
Abstract
Available from UMI in association with The British Library. Requires signed TDF. Si and Sn doped GaAs epilayers were grown with electron concentrations from 8 times 10^{14} cm^ {-3} (mu_{77 } = 28 times 10 ^3 cm^2/V-s) up to a peak of 1.16 times 10^ {19} cm^{-3} (using Sn). The major mobility-limiting impurity was carbon. Unintentionally doped material was p-type, with mu_{300} = 380 to 420 cm^2/V-s at N _{rm A}-N_ {rm D} = 1 - 3 times 10^{15} cm^{-3}. The range of applicability of the currently accepted GaAs growth model was investigated, leading to the construction of a detailed MBE surface phase diagram. Several surface phenomena are described with reference to this diagram. Subsequent experiments investigated the growth of InAs. Good quality InAs could only be nucleated on (100) GaAs by using the minimum As_4 flux permitting stochiometric growth at a temperature just below that at which InAs sublimates non-congruently. Phase diagrams were constructed to demonstrate the relationship between surface reconstruction, growth conditions and material quality. The homoepitaxial growth behaviour of InAs was essentially identical to that of GaAs. Si and Sn were n-type dopants in InAs, exhibiting 100% electrically active incorporation and near-bulk mobilities at carrier concentrations from ~1 times 10^{16 } cm^{-3} to the solubility limit of Si, 2.3 times 10^{19} cm ^{-3}. The properties of n ^- layers were influenced by interfacial accumulations of low mobility electrons. Etch profiling was used to derive a 77 K mobility of ~ 90 times 10^3 cm^2/V-s at N_ {rm D}-N_{rm A} = 1.6 times 10 ^{15} cm^{ -3} for the bulk-like region of a thick unintentionally doped layer. This figure is comparable to the best mobilities obtained from VPE and bulk grown InAs at similar carrier concentrations.
- Publication:
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Ph.D. Thesis
- Pub Date:
- November 1987
- Bibcode:
- 1987PhDT........65N
- Keywords:
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- Physics: Condensed Matter