Ion implantation and subsequent annealing influence on some properties of As 3Se 2 films

Ion implantation with different gaseous ions (Ar ⁺, N ⁺ and O ⁺) and subsequent annealing were performed leading to a change in the thin film morphology and the measured optical properties. Optical and electronic microscope photographs are presented showing details of the rippled film surface and the appearance of bubbles. The obtained results are connected with the nature of teh defects created in the films by ion implantation.