Optical characterization of doped and undoped GaAs at 300 K
Abstract
Infrared reflectance spectroscopy was employed for the optical characterization of undoped GaAs, as well as for GaAs doped with Si, Zn and Cr. Dielectric constants, refractive indices and extinction coefficients were determined using the classical two oscillator model.
- Publication:
-
Infrared Physics
- Pub Date:
- January 1987
- DOI:
- 10.1016/0020-0891(87)90051-0
- Bibcode:
- 1987InfPh..27...57E