Comparison of the orientation effect of SiO2- and Si3N4-encapsulated GaAs MESFET's Ohnishi, T. ; Onodera, T. ; Yokoyama, N. ; Nishi, H. Abstract Publication: IEEE Electron Device Letters Pub Date: April 1985 DOI: 10.1109/EDL.1985.26086 Bibcode: 1985IEDL....6..172O