GaAs IMPATT diodes for satellite communications
Abstract
The next generation of satellite communication systems will use yet higher frequencies than are currently employed. At higher frequencies, smaller, higher-gain antennas can be used, so that only moderate power levels are required. It appears, in this connection, that solid state power sources are an attractive alternative to the presently employed TWT amplifiers. Principal advantages of the solid-state devices are related to small size, low voltage power supply requirements, and potentially higher reliability than tubes. In terms of CW power and efficiency, IMPATT diodes outrank all other solid-state devices at frequencies greater than 20 GHz. On the basis of a comparative evaluation of Si, GaAs, and InP devices, it is believed that for CW power sources GaAs will prove to be the best material. GaAs IMPATT diodes have been developed using double-drift, double-Read material. The 20 GHz diode is now under development.
- Publication:
-
Microwave Journal
- Pub Date:
- March 1982
- Bibcode:
- 1982MiJo...25...71M
- Keywords:
-
- Avalanche Diodes;
- Communication Satellites;
- Gallium Arsenides;
- Microwave Amplifiers;
- Component Reliability;
- Equivalent Circuits;
- Power Efficiency;
- Satellite Communication;
- Spacecraft Electronic Equipment;
- Electronics and Electrical Engineering