High resistivity molecular beam epitaxial AlGaAs for device applications
Abstract
AlGaAs molecular beam epitaxial (MBE) layers suitable for device application, are studied and the results are discussed. Analysis includes Van der Pauw and Hall measurements, photoluminescence, sheet resistance, photoinduced current transient spectroscopy (PITS), secondary ion spectroscopy, and capacitance-voltage profiling. All indications are that high quality buffer layers of AlGaAs and active layers of GaAs can be produced by MBE which can yield devices of exceptional performance.
- Publication:
-
Annual Report
- Pub Date:
- February 1980
- Bibcode:
- 1980ric..rept.....F
- Keywords:
-
- Aluminum Gallium Arsenides;
- Electrical Resistivity;
- Epitaxy;
- Field Effect Transistors;
- Molecular Beams;
- Electric Potential;
- Hall Effect;
- Photoluminescence;
- Spectroscopy;
- Solid-State Physics