Silane dissociation induced by infrared laser radiation
Abstract
The reaction was studied using a 4O W CW-C02 laser regulated between 918 and 980 cm. A photomultiplier was used to measure visible light, while a PbSnTe fast detector, cooled with liquid nitrogen, was used to analyze infrared luminiscence. Factors governing the separation of solid Si were sought. It is shown that the reaction velocity decreases rapidly with time, even when the residual silane concentation is enough to produce fast initial reaction in a new sample, due to the increase in hydrogen concentration. It is also found that the resonant absorption determines a reduction in the activation energy of the heterogeneous reaction, allowing the deposition of Si at lower temperatures.
- Publication:
-
Presented at 2nd Natl. Congr. on Quantum and Plasma Electron
- Pub Date:
- December 1980
- Bibcode:
- 1980qpe..congQ..20B
- Keywords:
-
- Carbon Dioxide Lasers;
- Dissociation;
- Reaction Kinetics;
- Silanes;
- Infrared Absorption;
- Infrared Lasers;
- Luminescence;
- Photolysis;
- Photomultiplier Tubes;
- Silicon;
- Lasers and Masers