Improved polycrystalline thin film gallium arsenide MOS solar cells
Abstract
Polycrystalline gallium arsenide thin films were deposited on tungsten-coated graphite substrates by the reaction of gallium, hydrogen chloride, and arsine in a hydrogen flow system. The deposited films were used for the fabrication of MOS type solar cells. The current-voltage characteristics of the solar cells can be improved by using a thin gallium arsenide phosphide layer on the surface of, or a brief zinc diffusion into, the gallium arsenide film. Large area (9 sq cm) solar cells with AM1 efficiencies of higher than 5% (without antireflection coating) have been prepared. With proper AR coating, the AM1 efficiency would be higher than 7.5%.
- Publication:
-
14th Photovoltaic Specialists Conference
- Pub Date:
- 1980
- Bibcode:
- 1980pvsp.conf.1306C
- Keywords:
-
- Gallium Arsenides;
- Metal Oxide Semiconductors;
- Polycrystals;
- Solar Cells;
- Thin Films;
- Volt-Ampere Characteristics;
- Energy Conversion Efficiency;
- Energy Technology;
- Fabrication;
- Hydrogen Chlorides;
- Substrates;
- Systems Simulation;
- Energy Production and Conversion