Step-stress testing of Schottky-barrier diodes
Abstract
A system was developed for subjecting microwave Schottky-barrier diodes to dc life tests and end-point measurements while avoiding problems usually encountered with transients or static charges. Using this system, testing at temperatures up to 300 C under forward and reverse bias conditions has yielded excellent results. A block diagram, a test method, and typical results are presented. The results suggest that one manufacturer's published failure-rate data shows a higher failure rate than the devices actually exhibit, and that this may be the result of the manufacturer's own testing problems with the static-sensitive devices. The test results also refute a contention that high-temperature reverse bias and/or avalanching of Schottky-barrier junctions causes device degradation.
- Publication:
-
In: Electronic Components Conference
- Pub Date:
- 1978
- Bibcode:
- 1978elco.conf...23D
- Keywords:
-
- Accelerated Life Tests;
- Component Reliability;
- Life (Durability);
- Schottky Diodes;
- Direct Current;
- Failure;
- P-N Junctions;
- Electronics and Electrical Engineering