Enhancement-mode ion-implanted InP F.E.T.s
Abstract
Planar enhancement-mode InP FETs have been fabricated through the use of ion implantation and subsequent electron-beam lithography. Noise figures of 3.2 and 2.6 dB were achieved at 8 GHz with associated gains of 6.4 and 4.7 dB, respectively.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1978
- DOI:
- 10.1049/el:19780432
- Bibcode:
- 1978ElL....14..643G
- Keywords:
-
- Fabrication;
- Field Effect Transistors;
- Indium Phosphides;
- Ion Implantation;
- Contact Resistance;
- Doped Crystals;
- N-Type Semiconductors;
- Noise Reduction;
- Planar Structures;
- Electronics and Electrical Engineering