Microdefects and striations in dislocation-free LEC-GaP crystals
Abstract
Dislocation-free GaP crystals grown by the liquid encapsulated Czochralski technique were characterized chiefly by the use of X-ray transmission topography and EBIC-mode scanning electron microscopy. Preliminary results obtained with transmission electron microscopy are also presented. X-ray topographs reveal a crystal inhomogeneity which is mainly attributed to the presence of non-stoichiometric striations. High densities (10 11-10 12 cm -3 of microdefects were detected, distributed both homogeneously and in a striated pattern. Various types of microdefects (perfect and faulted dislocation loops and (semi) coherent precipitates) were revealed. Although most microdefects are less than 1 μm across, significantly larger defects can form. Evidence for macroscopic dislocation generation due to point defect condensation is presented.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- November 1977
- DOI:
- 10.1016/0022-0248(77)90089-6
- Bibcode:
- 1977JCrGr..41...13D