The structure of HCL doped silicon oxides and of the overlaying metallization
Abstract
The addition of chlorine during processing improves the dielectric properties of silicon dioxide by reducing the concentration of mobile ions in the oxide. An optimum value of approximately 4 vol % HCl:02 is used because of possible detrimental effects. At higher concentrations of chlorine (e.g. 10 vol % HCl:02 mixture) the oxide surface becomes irregular and the excess chlorine forms pockets within the oxide. The oxide defects are characterized. Results show that their number, size and distribution are influenced by the chlorine concentrations, the processing sequence, the cooling rate following the oxidation, and the wafer orientation. The oxide defects also cause a local lifting of most metallizations and can cause pitting of aluminum.
- Publication:
-
Unknown
- Pub Date:
- October 1976
- Bibcode:
- 1976shds.rept.....B
- Keywords:
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- Additives;
- Hydrogen Chlorides;
- Metal Films;
- Metallizing;
- Silicon Oxides;
- Surface Reactions;
- Chemical Attack;
- Dielectric Properties;
- Oxidation;
- Oxide Films;
- Pitting;
- Silicon Films;
- Solid-State Physics