Microwave silicon power transistor
Abstract
A silicon planar NPN transistor which delivers an output power of three watts at a frequency of 4 GHz has been developed. It has been realized by parallel connection of small-signal transistors. The heat problem peculiar to the power transistor has been solved by using a heat sink made of silver. This paper describes the design of the power transistor, the fabrication techniques peculiar to the power transistor and its characteristics.
- Publication:
-
Fujitsu Scientific Technical Journal
- Pub Date:
- September 1976
- Bibcode:
- 1976FSTJ...12...73I
- Keywords:
-
- Electrical Properties;
- Fabrication;
- Microwave Amplifiers;
- Power Amplifiers;
- Silicon Transistors;
- Transistor Amplifiers;
- Planar Structures;
- Power Gain;
- Signal To Noise Ratios;
- Thermal Resistance;
- Electronics and Electrical Engineering