a Study of Quantum Effects in P-Type Inversion Layers.
Abstract
Holes in the inversion layers of Si at liquid helium range of temperatures and under high magnetic field were studied. Under magnetic fields greater than 40 kOe oscillations in the channel conductivity were observed. The number of carriers per Landau level was found to be independent of the order of the Landau level. Also the period of conductivity oscillations in gate voltage followed the cosine law when the sample was rotated in the magnetic field, and the degeneracy of the ground state subband was found to be two. The Dingle temperature as a function of the carrier concentration was measured and from it the carrier scattering time and mobility were deduced. The effective mass of holes was estimated from the dependences of the amplitude of Shubnikov de Haas oscillations on the temperature. Other features of the system, namely, the hot carrier effect, ionization of bound states, occupation of a higher subband, and an additional structure in the first two Landau levels are also discussed.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1974
- Bibcode:
- 1974PhDT........23L
- Keywords:
-
- Physics: Condensed Matter;
- Liquid Helium;
- Quantum Theory;
- Temperature Inversions;
- Carrier Mobility;
- Charge Carriers;
- Landau Damping;
- Magnetic Fields;
- Silicon;
- Temperature Distribution;
- Solid-State Physics