Control of fine-structure splitting of individual InAs quantum dots by rapid thermal annealing
Abstract
Degeneracy of the bright single exciton spin state is a prerequisite for the production of triggered polarization-entangled photon pairs from the biexciton decay of a quantum dot. Normally, however, the exciton spin states are split due to in-plane asymmetries. Here the authors demonstrate that the exciton splitting of an individual dot can be tuned through zero by thermal annealing. Repeated annealing blueshifts the exciton emission line of the dot, accompanied by a reduction and inversion in polarization splitting. Annealing is also demonstrated to control the detuning between the exciton and biexciton transitions in any selected dot.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2007
- DOI:
- arXiv:
- arXiv:quant-ph/0612047
- Bibcode:
- 2007ApPhL..90a1907E
- Keywords:
-
- indium compounds;
- III-V semiconductors;
- semiconductor quantum dots;
- rapid thermal annealing;
- biexcitons;
- spectral line shift;
- 73.21.La;
- 71.35.-y;
- 78.67.Hc;
- 61.72.Cc;
- Quantum dots;
- Excitons and related phenomena;
- Kinetics of defect formation and annealing;
- Quantum Physics
- E-Print:
- 12 pages, 3 figures. Accepted for publication in Applied Physics Letters