Relationship between orientation of CeO2 films and surface morphology

Pure c-axis orientation CeO₂ films were deposited on YSZ<100> single crystal substrates by pulse laser deposition (PLD) in oxygen. The optimum epitaxial growth temperature for a high level of c-axis orientation is 790 °C, and it is related to the morphology of CeO₂ grains. The more circular the shape of the grains is, the better the c-axis orientation and the smoothness of CeO₂ film surface are. This correlation appears to be an intrinsic feature of CeO₂ growth, independent of the type of substrate or the deposition method. Also it was found that the topography of the film surface grown by PLD reflects the morphology.