Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors
Abstract
This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.
- Publication:
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arXiv e-prints
- Pub Date:
- May 2006
- DOI:
- 10.48550/arXiv.physics/0605073
- arXiv:
- arXiv:physics/0605073
- Bibcode:
- 2006physics...5073W
- Keywords:
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- Physics - Instrumentation and Detectors
- E-Print:
- Presented at CLEO QELS, Long Beach, California (May 2006)