As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy
Abstract
As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed simultaneously. With a substrate temperature of 440 C and an As4 partial pressure of 2x10-6 torr, reflection high energy electron diffraction patterns and reflectance anisotropy spectra confirm a c(4x4) As-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that continual attachment / detachment of As molecules to and from the surface produces the observed dynamic behavior.
- Publication:
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arXiv e-prints
- Pub Date:
- February 2002
- DOI:
- arXiv:
- arXiv:physics/0202013
- Bibcode:
- 2002physics...2013T
- Keywords:
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- Physics - Chemical Physics;
- Physics - Atomic and Molecular Clusters
- E-Print:
- 11 pages, 5 figures