The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate
Abstract
The equilibrium shape of strained InAs quantum dots grown epitaxially on a GaAs(001) substrate is derived as a function of volume. InAs surface energies are calculated within density-functional theory, and a continuum approach is applied for the elastic relaxation energies.
- Publication:
-
arXiv e-prints
- Pub Date:
- July 1996
- DOI:
- 10.48550/arXiv.mtrl-th/9607012
- arXiv:
- arXiv:mtrl-th/9607012
- Bibcode:
- 1996mtrl.th...7012P
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 1 figure, to appear in "The Physics of Semiconductors"