Inhibited Al Diffusion and Growth Roughening of Ga-Coated Al(100)
Abstract
Ab initio calculations indicate that the ground state for Ga adsorption on Al(100) is on surface with local unit coverage. On Ga-coated Al(100), the bridge diffusion barrier for Al is large, but the Al-->Ga exchange barrier is zero: the ensuing incorporation of randomly deposited Al's into the Ga overlayer realizes a percolation network, efficiently recoated by Ga atoms. Based on calculated energetics, we predict rough surface growth at all temperatures; modeling the growth by a random deposition model with partial relaxation, we find a power-law divergent roughness w~t0.07+/-0.02.
- Publication:
-
Physical Review Letters
- Pub Date:
- July 1996
- DOI:
- 10.1103/PhysRevLett.77.695
- arXiv:
- arXiv:mtrl-th/9607002
- Bibcode:
- 1996PhRvL..77..695F
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- 4 pages RevTeX-twocolumn, no figures. to appear in Phys. Rev. Lett., July 1996