Field emission properties of nanocomposite carbon nitride films
Abstract
A modified cathodic arc technique has been used to deposit carbon nitride thin films directly on n+ Si substrates. Transmission Electron Microscopy showed that clusters of fullerene-like nanoparticles are embedded in the deposited material. Field emission in vacuum from as-grown films starts at an electric field strength of 3.8 V/micron. When the films were etched in an HF:NH4F solution for ten minutes, the threshold field decreased to 2.6 V/micron. The role of the carbon nanoparticles in the field emission process and the influence of the chemical etching treatment are discussed.
- Publication:
-
Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
- Pub Date:
- November 2000
- DOI:
- 10.1116/1.1322043
- arXiv:
- arXiv:cond-mat/9909125
- Bibcode:
- 2000JVSTB..18.2698A
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- 22 pages, 8 figures, submitted to J. Vac. Sc. Techn. B