Maximum metallic conductivity in Si-MOS structures
Abstract
We found that the conductivity of the two-dimensional electron system in Si metal-oxide-semiconductor structures is limited to a maximum value, Gmax, as either density increases or temperature decreases. This value Gmax is weakly disorder dependent and ranges from 100 to 140e2/h for samples whose mobilities differ by a factor of 4.
- Publication:
-
Physical Review B
- Pub Date:
- July 1999
- DOI:
- 10.1103/PhysRevB.60.R2154
- arXiv:
- arXiv:cond-mat/9812183
- Bibcode:
- 1999PhRvB..60.2154P
- Keywords:
-
- 71.30.+h;
- 72.15.Rn;
- 73.40.Qv;
- Metal-insulator transitions and other electronic transitions;
- Localization effects;
- Metal-insulator-semiconductor structures;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 3 pages, 3 ps-figs, RevTex, new data