Transverse magnetoresistance of the two-dimensional chiral metal
Abstract
We consider the two-dimensional chiral metal, which exists at the surface of a layered, three-dimensional sample exhibiting the integer quantum Hall effect. We calculate its magnetoresistance in response to a component of magnetic field perpendicular to the sample surface, in the low temperature, but macroscopic, regime where inelastic scattering may be neglected. The magnetoresistance is positive, following a Drude form with a field scale B0=Φ0/alel given by the transverse field strength at which one quantum of flux Φ0 passes through a rectangle with sides set by the layer-spacing a and the elastic mean free path lel. Experimental measurement of this magnetoresistance may, therefore, provide a direct determination of the elastic mean free path in the chiral metal.
- Publication:
-
Physical Review B
- Pub Date:
- February 1999
- DOI:
- 10.1103/PhysRevB.59.4999
- arXiv:
- arXiv:cond-mat/9809286
- Bibcode:
- 1999PhRvB..59.4999C
- Keywords:
-
- 73.40.Hm;
- 71.30.+h;
- 72.15.Rn;
- Metal-insulator transitions and other electronic transitions;
- Localization effects;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- submitted to Phys Rev B