Exciton and confinement potential effects on the resonant Raman scattering in quantum dots
Abstract
Resonant Raman scattering in spherical semiconductor quantum dots is theoretically investigated. The Fröhlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) uncorrelated electron-hole pairs in the strongly size-dependent quantized regime; (II) Wannier-Mott excitons in an infinite potential well; (III) excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolute values of the scattering intensities and substantially modify the Raman lineshape, even in the strong confinement regime.
- Publication:
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Semiconductor Science Technology
- Pub Date:
- August 1998
- DOI:
- arXiv:
- arXiv:cond-mat/9808058
- Bibcode:
- 1998SeScT..13..871M
- Keywords:
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- Condensed Matter
- E-Print:
- 12 pages REVTeX (preprint), 1 table, 3 figures. Subj-clas: Mesoscopic systems