Lateral photocurrent spreading in single quantum well infrared photodetectors
Abstract
Lateral physical effects in single quantum well infrared photodetectors (SQWIPs) under nonuniform illumination over the detector area are considered. These effects are due mainly to the in-plane transport of the photoinduced charge in the QW. The length of the lateral photocurrent spreading is determined by the in-plane conductivity of the carriers in the QW and characteristic time of the QW recharging, and can be as large as 101-104 μm. Closed-form analytical expressions for SQWIP responsivity for modulated infrared signal and modulation transfer function are obtained. Possible techniques to suppress lateral photocurrent spreading are discussed.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 1998
- DOI:
- arXiv:
- arXiv:cond-mat/9805004
- Bibcode:
- 1998ApPhL..72.2865E
- Keywords:
-
- 72.40.+w;
- 73.50.Pz;
- 85.60.Gz;
- 85.60.Bt;
- 07.57.Kp;
- 78.66.-w;
- 73.61.-r;
- 42.30.Lr;
- 85.30.De;
- Photoconduction and photovoltaic effects;
- Photodetectors;
- Optoelectronic device characterization design and modeling;
- Bolometers;
- infrared submillimeter wave microwave and radiowave receivers and detectors;
- Optical properties of specific thin films;
- Electrical properties of specific thin films;
- Modulation and optical transfer functions;
- Semiconductor-device characterization design and modeling;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Latex (Revtex), 3 pages, 1 ps figure. To be published in Appl. Phys. Lett