Monte Carlo study of Si(111) homoepitaxy
Abstract
An attempt is made to simulate the homoepitaxial growth of a Si(111) surface by the kinetic Monte Carlo method in which the standard solid-on-solid model and the planar model of the (7×7) surface reconstruction are used in combination. By taking account of surface reconstructions as well as atomic deposition and migrations, it is shown that the effect of a cooperative stacking transformation is necessary for a layer growth.
- Publication:
-
Physical Review B
- Pub Date:
- June 1998
- DOI:
- 10.1103/PhysRevB.57.14623
- arXiv:
- arXiv:cond-mat/9804004
- Bibcode:
- 1998PhRvB..5714623I
- Keywords:
-
- 68.55.-a;
- 68.35.Bs;
- 61.82.Fk;
- 68.10.Jy;
- Thin film structure and morphology;
- Structure of clean surfaces;
- Semiconductors;
- Condensed Matter - Statistical Mechanics;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 5 figures. For Fig.1 of this article, please see Fig.2 of Phys.Rev. B56, 3583 (1997). To appear in Phys.Rev.B. (June 1998)